DocumentCode :
514173
Title :
Multipolar Plasma Treatments of In0.53Ga0.47As Surface for MIS Devices Application
Author :
Renaud, M. ; Boher, P. ; Barrier, J. ; Schneider, J. ; Chane, J.P.
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliquée, 3, Avenue Descartes - 94451 LIMEIL BREVANNES CEDEX (France)
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
129
Lastpage :
133
Abstract :
Multipolar plasma treatments combined with a high vacuum system and a monitoring by ellipsometry have been developed to achieve high electrical quality InGaAs/Si3N4 interfaces. Interface states density in the low 1011 cm¿2 eV¿1 are obtained under controlled conditions, which is therefore suitable for a MISFET technology.
Keywords :
FETs; Indium gallium arsenide; Insulation; MISFETs; Optical surface waves; Passivation; Plasma applications; Plasma devices; Surface treatment; Vacuum systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5437017
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=514173
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