DocumentCode
514175
Title
A New Punchthrough Model for Short Channel MOSFET
Author
Chen, D. ; Li, Z.
Author_Institution
Institute of Microelectronics, Tsinghua University, Beijing, China
fYear
1988
fDate
13-16 Sept. 1988
Abstract
After the source-drain punchthrough was considered detailly, a new set of analytical models for punchthrough voltage Vp were suggested, which are suitable to NMOSFET with uniformly doped substrate or channel ion-implanted substrate and PMOSFET with buried channel, as well as a high speed numerical simulation method was developed for autosearching of Vp . Excellent agreements were shown between the results of numerical simulation and analytical models.
Keywords
Analytical models; Electrons; MOS devices; MOSFET circuits; Microelectronics; Niobium; Numerical simulation; Poisson equations; Silicon; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437019
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