Title :
The Impact of Different Hot-Carrier-Degradation Components on the Optimization of Submicron n-Channel LDD Transistors
Author :
Biermans, P.T.J. ; Poorter, T. ; Merks-Eppingbroek, H.J.H.
Author_Institution :
Philips Research Laboratories, PO Box 80,000, NL-5600 JA Eindhoven, The Netherlands
Abstract :
Measuring ¿Ide/Ids for only a short time period to characterize the hot-carrier degradation of submicron LDD transistors can lead to erroneous predictions of the transistor lifetime. Evaluation of the degradation components ¿Rs,-¿ß/ß, and ¿VT is proposed. A physical explanation for the origin of these components is provided together with their dependence on the n¿dose of the LDD region.
Keywords :
Current measurement; Degradation; Guidelines; Hot carriers; Laboratories; MOSFETs; Resumes; Stress measurement; Time measurement; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
