Title :
MOSFET Gate Current Modelling using Monte-Carlo Method
Author :
Voves, J. ; Vesely, J.
Author_Institution :
The Czech Technical University of Prague, Faculty of Electrical Engineering, Suchbátarova 2, 166 27 Praha 6, Czechoslovakia
Abstract :
The new technique for determining the probability of hot-electron travel through the gate oxide is presented. The technique is based on the Monte Carlo method and is used in MOSFET gate current modelling. The calculated values of gate current are compared with experimental results from direct measurements on MOSFET test chips.
Keywords :
Current measurement; Degradation; Electrodes; Electron emission; Electron traps; MOSFET circuits; Probability; Semiconductor device measurement; Testing; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
