Title :
Annealing of Hot-Carrier-Induced MOSFET Degradation
Author :
Mahnkopf, R. ; Przyrembel, G. ; Wagemann, H.G.
Author_Institution :
Institut fÿr Werkstoffe der Elektrotechnik der Technischen Universitÿt Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
Abstract :
The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.
Keywords :
Annealing; Degradation; Hot carriers; Interface states; MOSFET circuits; Stress; Synchrotrons; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
