Comparison of Long-And Short-Channel MOSFET´s Carried Out by 3D-MINIMOS

An accurate three-dimensional simulation program for MOSFET devices has been developed by extending MINIMOS (vers. 4) in 3D. The physical model is based on the ´hotelectron-transport model´, which includes the Poisson equation, the continuity equations and a selfconsistent set of equations for the currents, mobilities and carrier temperatures. The standard finite difference discretization and the SOR (successive over relaxation) method are utilized to reduce computational time and memory requirements. Adaptive grid refinement is used to equidistribute the discretization errors. Three-dimensional effects like threshold shift for small channel devices, channel narrowing and the accumulation of carriers at the channel edge have been successfully modeled. Our comparison of several MOSFET´s make clear that three-dimensional calculations are most important for accurate device modeling.