Leakage Current Limitations of Trench Cell for 16M DRAMs

One of the primary factors controlling 16M DRAM cell concept choice is that of sufficiently small leakage. Trench cell leakage to the substrate, to the adjacent trench and to neighboring transistor and bitline contact have been determined here for reduced geometry Trench Cells using a manufacturable 4M process. It is shown that the ``Super Shrink Trench Cell´´ is a viable 16M DRAM candidate insofar as leakage limitations are concerned.