DocumentCode
514187
Title
0.5 μm CMOS Devices and Circuit Characterization
Author
Guegan, G. ; Lerme, M. ; Deleonibus, Simon ; Martin, S. Deleombus F ; Tredesco, S. ; Gautier, J.
Author_Institution
D. LETI CENG, 85 X, 38041 GRENOBLE Cedex FRANCE
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
911
Lastpage
914
Abstract
CMOS circuits with feature sizes scaled down to 0.5μm [1],[2] and even less [3],[4] have already been reported. In this paper, we report the fabrication of half micron CMOS using mixed e-beam/optical lithography and Rapid Thermal Annealing (RTA) for both BPSG reflow and junction activation. The aim of this work is to characterize devices and to compare speed performances of demonstrator circuits such as ring oscillator and 16kxl SRAM fabricated using either 0.5μm CMOS advanced technology at a 3.3V supply voltage or a 0.8μm CMOS at 5V.
Keywords
CMOS process; CMOS technology; Circuits; Delay; Dielectric substrates; Optical device fabrication; Power supplies; Random access memory; Ring oscillators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5437070
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