• DocumentCode
    514187
  • Title

    0.5 μm CMOS Devices and Circuit Characterization

  • Author

    Guegan, G. ; Lerme, M. ; Deleonibus, Simon ; Martin, S. Deleombus F ; Tredesco, S. ; Gautier, J.

  • Author_Institution
    D. LETI CENG, 85 X, 38041 GRENOBLE Cedex FRANCE
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    911
  • Lastpage
    914
  • Abstract
    CMOS circuits with feature sizes scaled down to 0.5μm [1],[2] and even less [3],[4] have already been reported. In this paper, we report the fabrication of half micron CMOS using mixed e-beam/optical lithography and Rapid Thermal Annealing (RTA) for both BPSG reflow and junction activation. The aim of this work is to characterize devices and to compare speed performances of demonstrator circuits such as ring oscillator and 16kxl SRAM fabricated using either 0.5μm CMOS advanced technology at a 3.3V supply voltage or a 0.8μm CMOS at 5V.
  • Keywords
    CMOS process; CMOS technology; Circuits; Delay; Dielectric substrates; Optical device fabrication; Power supplies; Random access memory; Ring oscillators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5437070