DocumentCode :
51436
Title :
Physics of the Negative Resistance in the Avalanche 
Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness
Author :
Spirito, Paolo ; Breglio, Giovanni ; Irace, Andrea ; Maresca, Luca ; Napoli, Ettore ; Riccio, Michele
Author_Institution :
Dept. of Electr. & Inf. Technol. Eng., Univ. of Naples Federico II, Naples, Italy
Volume :
61
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
1457
Lastpage :
1463
Abstract :
In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.
Keywords :
insulated gate bipolar transistors; negative resistance; IGBT; ad hoc numerical simulations; avalanche I-V curve; avalanche behavior; design criteria; field-stop insulated gate bipolar transistors; negative differential resistance branches; Current density; Doping; Insulated gate bipolar transistors; Integrated circuits; Mobile communication; Resistance; Transistors; Avalanche ruggedness; current filamentation; insulated gate bipolar transistor (IGBT) design; insulated gate bipolar transistor (IGBT) design.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2311169
Filename :
6778060
Link To Document :
