Nanostructured Iron-Doped Indium Tin Oxide Films: Synthesis and Characterization

Author

Qi Shao ; Pui Sze Ku ; Zapien, J.A. ; Leung, C.W. ; Ruotolo, Antonio

Author_Institution

Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Hong Kong, China

Volume

50

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

1

Lastpage

4

Abstract

Multifunctional, Fe-doped indium tin oxide (ITO) nanostructured films were grown by pulsed laser deposition on sapphire substrates. The films showed low resistivity and n-type conductivity with a carrier density as high as 3 × 10²¹ cm^-3. A magnetic moment at room temperature larger than those of any iron oxides was measured in films with Fe doping as low as 2%. We ascribe it to the formation of bound polarons. A strong green photoemission at room temperature was observed, which we ascribe to quantum confinement effect. The coexistence of ferromagnetism and luminescence in the visible range makes our films of potential for magneto-optoelectronic applications.

Keywords

carrier density; electrical conductivity; electrical resistivity; ferromagnetic materials; indium compounds; iron; magnetic moments; magnetic thin films; nanofabrication; nanomagnetics; nanostructured materials; photoemission; photoluminescence; polarons; pulsed laser deposition; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; tin compounds; wide band gap semiconductors; Al₂O₃; ITO:Fe; ascribe moment; bound polarons; carrier density; electrical resistivity; ferromagnetism; green photoemission; luminescence; magneto-optoelectronic applications; multifunctional iron-doped indium tin oxide nanostructured films; n-type conductivity; pulsed laser deposition; quantum confinement effect; sapphire substrates; temperature 293 K to 298 K; visible range; Amorphous magnetic materials; Indium tin oxide; Iron; Magnetic hysteresis; Magnetic semiconductors; Substrates; Temperature measurement; Indium tin oxide; magnetic semiconductors; quantum confinement effect;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2014.2301174

Filename

6832806