DocumentCode :
515472
Title :
25 GHz operation of silicon optical modulator with projection MOS structure
Author :
Fujikata, Junichi ; Ushida, Jun ; Ming-Bin, Yu ; ShiYang, Zhu ; Liang, Ding ; Guo-Qiang, Patrick Lo ; Kwong, Dim-Lee ; Nakamura, Takahiro
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Tsukuba, Japan
fYear :
2010
fDate :
21-25 March 2010
Firstpage :
1
Lastpage :
3
Abstract :
We report a high-speed and compact silicon optical modulator based on the free carrier plasma dispersion in a silicon rib waveguide with a MOS (metal-oxide-semiconductor) junction structure. To achieve high-speed and high-efficiency performance, an improved structure of a very small rib waveguide including a projection MOS junction was studied. We demonstrated high speed of 25 GHz operation in case of 120-200 ¿m phase-shift length and high optical modulation efficiency of 0.5-0.67 Vcm for V¿L by using a projection MOS junction structure. According to the carrier-density simulation, higher operation bandwidth up to 40 GHz can be realized.
Keywords :
MIS structures; carrier density; elemental semiconductors; integrated optics; microwave photonics; optical modulation; optical waveguides; rib waveguides; silicon; MOS junction structure; Si; bandwidth 40 GHz; carrier-density simulation; free carrier plasma dispersion; frequency 25 GHz; metal-oxide-semiconductor junction structure; optical modulation efficiency; optical modulator; silicon rib waveguide; Charge carrier density; High speed optical techniques; Optical interferometry; Optical modulation; Optical saturation; Optical waveguides; Phase modulation; Photonics; Silicon; Waveguide junctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location :
San Diego, CA
Electronic_ISBN :
978-1-55752-884-1
Type :
conf
Filename :
5465181
Link To Document :
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