25 GHz operation of silicon optical modulator with projection MOS structure

Author

Fujikata, Junichi ; Ushida, Jun ; Ming-Bin, Yu ; ShiYang, Zhu ; Liang, Ding ; Guo-Qiang, Patrick Lo ; Kwong, Dim-Lee ; Nakamura, Takahiro

Author_Institution

Nano Electron. Res. Labs., NEC Corp., Tsukuba, Japan

fYear

2010

fDate

21-25 March 2010

Firstpage

1

Lastpage

3

Abstract

We report a high-speed and compact silicon optical modulator based on the free carrier plasma dispersion in a silicon rib waveguide with a MOS (metal-oxide-semiconductor) junction structure. To achieve high-speed and high-efficiency performance, an improved structure of a very small rib waveguide including a projection MOS junction was studied. We demonstrated high speed of 25 GHz operation in case of 120-200 Â¿m phase-shift length and high optical modulation efficiency of 0.5-0.67 Vcm for V_Â¿L by using a projection MOS junction structure. According to the carrier-density simulation, higher operation bandwidth up to 40 GHz can be realized.

Keywords

MIS structures; carrier density; elemental semiconductors; integrated optics; microwave photonics; optical modulation; optical waveguides; rib waveguides; silicon; MOS junction structure; Si; bandwidth 40 GHz; carrier-density simulation; free carrier plasma dispersion; frequency 25 GHz; metal-oxide-semiconductor junction structure; optical modulation efficiency; optical modulator; silicon rib waveguide; Charge carrier density; High speed optical techniques; Optical interferometry; Optical modulation; Optical saturation; Optical waveguides; Phase modulation; Photonics; Silicon; Waveguide junctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)

Conference_Location

San Diego, CA

Electronic_ISBN

978-1-55752-884-1

Type

conf

Filename

5465181