DocumentCode
51565
Title
Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard
Author
Nakamura, Shuji ; Pashkin, Yuri A. ; Jaw-Shen Tsai ; Kaneko, Nobu-hisa
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Techonology, Tsukuba, Japan
Volume
64
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
1696
Lastpage
1701
Abstract
As a step toward realizing the quantum current standard, single-electron pumping of parallel SINIS turnstiles was performed. Eleven SINIS turnstiles were fabricated on the same chip, and the number of operating SINIS turnstiles was increased one by one. As a result, 11 turnstiles were operated simultaneously up to 100 MHz, resulting in a pumped dc of 176.2 pA. We also did a linearity check toward parallelization. This paper for increasing the pumped current by parallelization will lead to practical use of stable and accurate dc sources with tiny values of the output current and the metrology triangle experiment for SI redefinition.
Keywords
electric current measurement; measurement standards; DC source; SI redefinition; current 176.2 pA; parallel SINIS turnstile; parallelization; quantum current standard; single electron pumping; Current measurement; Electrodes; Linearity; Logic gates; Metrology; Radio frequency; Standards; Parallel operation; SINIS turnstile; quantum current standard; single-electron transistor; superconductor; superconductor.;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2015.2418452
Filename
7100900
Link To Document