DocumentCode :
51565
Title :
Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard
Author :
Nakamura, Shuji ; Pashkin, Yuri A. ; Jaw-Shen Tsai ; Kaneko, Nobu-hisa
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Techonology, Tsukuba, Japan
Volume :
64
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1696
Lastpage :
1701
Abstract :
As a step toward realizing the quantum current standard, single-electron pumping of parallel SINIS turnstiles was performed. Eleven SINIS turnstiles were fabricated on the same chip, and the number of operating SINIS turnstiles was increased one by one. As a result, 11 turnstiles were operated simultaneously up to 100 MHz, resulting in a pumped dc of 176.2 pA. We also did a linearity check toward parallelization. This paper for increasing the pumped current by parallelization will lead to practical use of stable and accurate dc sources with tiny values of the output current and the metrology triangle experiment for SI redefinition.
Keywords :
electric current measurement; measurement standards; DC source; SI redefinition; current 176.2 pA; parallel SINIS turnstile; parallelization; quantum current standard; single electron pumping; Current measurement; Electrodes; Linearity; Logic gates; Metrology; Radio frequency; Standards; Parallel operation; SINIS turnstile; quantum current standard; single-electron transistor; superconductor; superconductor.;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2015.2418452
Filename :
7100900
Link To Document :
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