DocumentCode
516009
Title
High-linearity modified uni-traveling carrier photodiodes
Author
Pan, Huapu ; Fu, Yang ; Li, Zhi ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fYear
2010
fDate
21-25 March 2010
Firstpage
1
Lastpage
3
Abstract
We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm at 20 GHz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; frequency 20 GHz; linearity; third-order output intercept point; unitraveling carrier photodiodes; Fiber nonlinear optics; Frequency; Indium gallium arsenide; Indium phosphide; Optical distortion; Optical filters; Optical signal processing; Photodiodes; Power harmonic filters; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Conference_Location
San Diego, CA
Electronic_ISBN
978-1-55752-884-1
Type
conf
Filename
5465723
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