Title :
A Modular 4K ?? 16 Dual Port Memory
Author :
Ferrant, R. ; Stachetti, V.
Author_Institution :
MATRA M.H.S., Nantes, France
Abstract :
This paper describes a 4K×16 Dual Port Memory. The component is designed with the .8μm 1 polysilicide/2 metals MHS´ SCMOS technology and it has a full CMOS 8-transistor-memory cell. It has been designed in order to fit requirements such as military specifications and compatibility with market demand. The internal circuits and floor-plan are organized to obtain enough flexibility for designing other products by using silicon compilers.
Keywords :
CMOS memory circuits; integrated circuit layout; memory architecture; random-access storage; transistor circuits; CMOS 8-transistor-memory cell; MHS SCMOS technology; dual port memory; market demand; polysilicide; silicon compiler; CMOS technology; Capacitance; Driver circuits; Flexible printed circuits; Gas discharge devices; Master-slave; Power generation; Product design; Random access memory; Silicon compiler;
Conference_Titel :
Solid-State Circuits Conference, 1990. ESSCIRC '90. Sixteenth European
Conference_Location :
Grenoble
Print_ISBN :
2-86332-087-4
