Specific Circuit for Solving Elliptic PDEs

Author

Theodorou, F. ; Pagano, P. ; Gaffiot, F. ; Boutherin, B. ; Menezla, R. ; Le Helley, M.

Author_Institution

LEAME, Ecole Centrale de Lyon, Lyon, France

Volume

1

fYear

1990

fDate

19-21 Sept. 1990

Firstpage

277

Lastpage

280

Abstract

A specific circuit to solve ΔΨ=f(Ψ), by finite-difference method, in 3D is presented. This circuit has been designed in CMOS-2μm technology, its area is about 0.7 square centimeter (100,000 transistors). Using this circuit to simulate potential distribution in silicon devices shows a drastic reduction of the computation time, 1.7 μs per discretization node against 900 μs by a software approach. This circuit is a processing element of a SIMD system devoted to solve large systems of algebraic equations in a PC-type environment.

Keywords

CMOS integrated circuits; differential algebraic equations; elliptic equations; finite difference methods; integrated circuit design; partial differential equations; pipeline arithmetic; CMOS technology; SIMD system; algebraic equation; circuit design; elliptic FDE; finite difference method; partial differential equations; potential distribution simulation; processing element; silicon devices; size 2 mum; CMOS technology; Circuit simulation; Computational modeling; Distributed computing; Finite difference methods; Fixed-point arithmetic; Hardware; Partial differential equations; Poisson equations; Silicon devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1990. ESSCIRC '90. Sixteenth European

Conference_Location

Grenoble

Print_ISBN

2-86332-087-4

Type

conf

Filename

5467791