Title :
A 256K NMOS EPROM
Author :
De Subercasaux, Ch ; Gilles, J.
Author_Institution :
THOMSON SEMICONDUCTORS/EUROTECHNIQUE, B.P. 2 - 13790 ROUSSET - FRANCE
Abstract :
A 256K EPROM will be described. This memory achieves a typical access time of 150 ns. It is fabricated with a 2 ¿m double polysilicon E/D NMOS technology. The cell size is 45,5 ¿m2. The chip size is 24 mm2, including 4 redundant rows. The majors features are a simplified process and a dynamic decoder, using an address transition detector circuit.
Keywords :
Circuits; Clocks; Decoding; EPROM; Energy consumption; Etching; MOS devices; Regulators; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 1984. ESSCIRC '84. Tenth European
Conference_Location :
Edinburgh, UK
