DocumentCode :
516318
Title :
10 Gbit/s Silicon Bipolar Laser Driver IC
Author :
Derksen, Rainer H. ; Wernz, Horst
Author_Institution :
ANT Nachrichtentechnik GmbH, Abt. EVO35, Gerberstr. 33, D-W7150 Backnang, Germany
Volume :
1
fYear :
1993
fDate :
22-24 Sept. 1993
Firstpage :
146
Lastpage :
149
Abstract :
A 10 Gbit/s silicon bipolar laser driver IC for direct modulation of a laser diode has been developed and fabricated. The adjustable modulation current range is 15 mA - 45 mA. The IC can drive 25 ¿-laser modules via a 25 ¿-line. Typical power dissipation is 1.2 W for a modulation current of 45 mA. The IC is one of the fastest laser driver ICs in silicon. In contrast to most previous works in this field, not only the capability to drive an ohmic load is shown, but also the performance in the case of driving a real laser module.
Keywords :
Bipolar integrated circuits; Current measurement; Design optimization; Diode lasers; Mirrors; Power dissipation; Resistors; Silicon; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1993. ESSCIRC '93. Nineteenth European
Conference_Location :
Sevilla, Spain
Print_ISBN :
2-86335-134-X
Type :
conf
Filename :
5467922
Link To Document :
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