DocumentCode
516398
Title
Monolithic Silicon R.F. Circuitry - Current Achievements and Future Potential
Author
Saul, P.H.
Author_Institution
Plessey Res. Caswell Ltd., Towcester, UK
Volume
1
fYear
1990
fDate
19-21 Sept. 1990
Firstpage
25
Lastpage
28
Abstract
This paper describes recent work on R.F. circuitry for frequencies in the GHz range. Results on active mixers and low noise R.F. amplifiers on a 1 micron silicon bipolar process illustrate the current state-of-the-art, while simulations on GHz active filters show the potential for future high level analogue integration.
Keywords
elemental semiconductors; low noise amplifiers; mixers (circuits); radiofrequency amplifiers; silicon; Si; active mixers; high level analogue integration; low noise RF amplifiers; monolithic silicon RF circuitry; silicon bipolar process; size 1 micron; Circuit noise; Contact resistance; Energy consumption; Frequency; Noise figure; Noise generators; Noise reduction; Resistors; Silicon; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1990. ESSCIRC '90. Sixteenth European
Conference_Location
Grenoble
Print_ISBN
2-86332-087-4
Type
conf
Filename
5468011
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