Title :
Monolithic Silicon R.F. Circuitry - Current Achievements and Future Potential
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Abstract :
This paper describes recent work on R.F. circuitry for frequencies in the GHz range. Results on active mixers and low noise R.F. amplifiers on a 1 micron silicon bipolar process illustrate the current state-of-the-art, while simulations on GHz active filters show the potential for future high level analogue integration.
Keywords :
elemental semiconductors; low noise amplifiers; mixers (circuits); radiofrequency amplifiers; silicon; Si; active mixers; high level analogue integration; low noise RF amplifiers; monolithic silicon RF circuitry; silicon bipolar process; size 1 micron; Circuit noise; Contact resistance; Energy consumption; Frequency; Noise figure; Noise generators; Noise reduction; Resistors; Silicon; Surface resistance;
Conference_Titel :
Solid-State Circuits Conference, 1990. ESSCIRC '90. Sixteenth European
Conference_Location :
Grenoble
Print_ISBN :
2-86332-087-4
