• DocumentCode
    516413
  • Title

    A High Density Bipolar Static Memory Cell for 256K and Beyond

  • Author

    Fitzgerald, Brian F. ; El-Kareh, Badih ; Garnache, Richard R. ; Lane, Paul K.

  • Author_Institution
    IBM General Technology Division, Essex Junction, VT 05452. Telephone: (802) 769-6254
  • fYear
    1985
  • fDate
    16-18 Sept. 1985
  • Firstpage
    131
  • Lastpage
    138
  • Abstract
    Using an advanced bipolar trench technology, a high density I2L type memory cell has been fabricated in a 1K static RAM test vehicle. By maximizing the utility of the trench, the 1K RAM contains a cell with high density and large signal for extension to 256K.
  • Keywords
    Doping; FETs; Isolation technology; Logic testing; Rails; Random access memory; Read-write memory; Stability; Telephony; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1985. ESSCIRC '85. 11th European
  • Conference_Location
    Toulouse, France
  • Type

    conf

  • Filename
    5468040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516413