MOSLAM : A switch level simulator based on an efficient analysis of conducting paths

This paper aims to present a new switch level simulator for MOS VLSI design. The simplicity of its algorithms and its rapidity are felt to be attractive for designers. As an introduction, we will situate the switch level as a good alternative to the boolean gate level of description. In the second section we will briefly discuss two existing simulators, FLOGMOS and MOSSIM 2. Finally in third section, we will present the basic ideas which led to the elaboration of MOSLAM, the great lines of the used algorithms, and some of the advantages this simulator represents.