Title :
A 13ns/350mW 2Kw Ã\x97 9b RAM using Hi-BiCMOS Technology
Author :
Miwa, Hideo ; Yamauchi, Koudo ; Odaka, Masanori ; Ogiue, Katsumi ; Ide, Akira ; Yamamura, Masahiro
Author_Institution :
Hitachi VLSI Engineering Corp., Hitachi Ltd., Tokyo, Japan
Abstract :
A 2-Kword × 9-bit, TTL-compatible, high-speed RAM has been developed using 2 ¿m Hi-BiCMOS technology. The RAM has an address access time of 13 ns, an active power of 350 mW, and a standby power of 40 mW. These characteristics have been achieved by overall use of Bipolar-CMOS combination circuits.
Keywords :
Bipolar transistors; CMOS technology; Capacitance; Decoding; Delay effects; Driver circuits; High power amplifiers; Power dissipation; Read-write memory; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1986. ESSCIRC '86. Twelfth European
Conference_Location :
Delft, The Netherlands
