DocumentCode :
516493
Title :
A Comparison of GaAs HJBT and Silicon Bipolar Technologies For High Speed Analogue to Digital Converters
Author :
Joy, A.K. ; Holden, A.J. ; Leslie, T.C. ; Saul, P.H.
Author_Institution :
Plessey Research & Technology Ltd., Allen Clark Research Centre, Caswell, Towcester, Northants, NN12 8EQ.
fYear :
1988
fDate :
21-23 Sept. 1988
Firstpage :
323
Lastpage :
326
Keywords :
Analog-digital conversion; Bandwidth; Bipolar transistors; Circuit analysis; Circuit simulation; Gallium arsenide; Isolation technology; SPICE; Silicon; Tail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
Type :
conf
Filename :
5468275
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=516493
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