Title :
Performance Enhancement of Compatible Lateral Bipolar Transistors for High-Precision CMOS Analog Design
Author :
Arreguit, X. ; Vittoz, E.A.
Author_Institution :
ECOLE POLYTECHNIQUE FEDERALE ELECTRONICS LABORATORIES, LEG/EL-ECUBLENS, CH-1015 LAUSANNE
Abstract :
The residual gate effect on the lateral collector current of compatible lateral bipolar transistors is modelled and a novel method for biasing the gate is presented. It is shown that this effect can be used to compensate transistors mismatch in order to enhance the precision of analog CMOS circuits by a factor of 5-10 over a temperature range of 100°K.
Keywords :
Analog circuits; Bipolar transistors; CMOS analog integrated circuits; CMOS technology; Nonvolatile memory; Semiconductor device modeling; Temperature distribution; Temperature sensors; Transconductance; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
