Title :
3D Double-Lambda-Diode VLSI SRAM Cells
Author :
McGonigal, Gordon C. ; Elmasry, Mohamed I.
Author_Institution :
Department of Electrical Engineering, University of Waterloo, Waterloo, Ontario, Canada, N2L 3G1
Abstract :
A three-dimensional (3D) implementation of the double-lambda-diode SRAM cell is proposed. It is shown that this cell provides greater noise immunity, but requires approximately the same area, as the conventional resistive-load cell.
Keywords :
CMOS technology; Circuit noise; Driver circuits; Dynamic voltage scaling; Integrated circuit interconnections; MOS devices; Random access memory; Stacking; Threshold voltage; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
