• DocumentCode
    516624
  • Title

    Six Most CAM Cell For High Density Array

  • Author

    Yulin, Qiu

  • Author_Institution
    GMD/EIS. Postfach 1240, D-5205 St. Augustin 1, West Germany.; A visiting scholar from Microelectronics Center, Academia Sinica, Beijing, China.
  • fYear
    1988
  • fDate
    21-23 Sept. 1988
  • Firstpage
    82
  • Lastpage
    85
  • Abstract
    A new CAM cell has been presented. The cell consists of only 6 MOS transistors and the size of it can be comparable to full CMOS SRAM cell. It can work either statically or dynamically. Hence, it provides a possibility to develop high density CAM chip.
  • Keywords
    CADCAM; CMOS process; CMOS technology; Charge transfer; Computer aided manufacturing; Diodes; MOSFETs; Microelectronics; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
  • Conference_Location
    Manchester, UK
  • Type

    conf

  • Filename
    5468433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=516624