Title :
New Concepts for Wordline Driving Circuits in CMOS Dynamic Random Access Memories
Author :
Pribyl, W. ; Harter, J. ; Reczek, W. ; Strunz, R.
Author_Institution :
SIEMENS AG - COMPONENTS GROUP, Otto Hahn Ring 6, D-8000 Mÿnchen 83
Abstract :
NMOS-type circuits for wordline driving circuits in CMOS-DRAMs are discussed. Associated reliability risks and circuit design problems are shown. As a solution to these problems, a new concept using true CMOS circuitry for wordline driving circuits is presented. Simulation results indicate significant advantages. Measurement results obtained from a realization on a 4 Megabit DRAM are presented at the conference.
Keywords :
Breakdown voltage; CMOS logic circuits; CMOS memory circuits; Clocks; DRAM chips; MOS devices; Parasitic capacitance; Switches; Switching circuits; Voltage control;
Conference_Titel :
Solid-State Circuits Conference, 1988. ESSCIRC '88. Fourteenth European
Conference_Location :
Manchester, UK
