DocumentCode :
516808
Title :
A High Speed Wide Band SRAM Macro using Complementary Half-Swing Bus Architecture
Author :
Nakase, Yasunobu ; Kondo, Harufusa ; Iwabu, Atsushi ; Mashiko, Koichiro ; Sumi, Tadashi
Author_Institution :
System LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara Itami 664, Japan
fYear :
1996
fDate :
17-19 Sept. 1996
Firstpage :
384
Lastpage :
387
Abstract :
A complementary half swing architecture is proposed for the high speed and low power bus operation. The bus is composed from a pair of lines. Each bus line within a pair utilizes the upper or lower half of the supply voltage exclusively. The architecture is applied to an embedded SRAM of the 0.5¿m CMOS ATM switch LSI. Simulation results indicate that it operates beyond 200MHz at the supply voltage of 3.0V. The worst case power dissipation is reduced by half and the peak current is reduced by 66%.
Keywords :
Asynchronous transfer mode; Circuit simulation; Driver circuits; Large scale integration; Operational amplifiers; Power engineering and energy; Random access memory; Switches; Voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1996. ESSCIRC '96. Proceedings of the 22nd European
Conference_Location :
Neuchatel, Switzerland
Print_ISBN :
2-86332-197-8
Type :
conf
Filename :
5468672
Link To Document :
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