DocumentCode
516824
Title
A 4 Gs/s and 10 mV Latched Comparator in 0.5 μm GaAs HEMT Technology
Author
Feng, Shen ; Oehler, Frank ; Sauerer, Josef ; Hagelauer, Richard ; Seitzer, Dieter
Author_Institution
Fraunhofer-Institute for Integrated Circuits, Wetterkreuz 13, W-8520 Erlangen, Germany
Volume
1
fYear
1991
fDate
11-13 Sept. 1991
Firstpage
109
Lastpage
112
Abstract
A high performance latched comparator is implemented in a 0.5 μm GaAs HEMT technology. Measurement results verify the comparator is able to operate up to 4 Gs/s and has a 10 mV sensitivity.
Keywords
Capacitors; Chirp modulation; Delay effects; Frequency modulation; Gallium arsenide; HEMTs; Linearity; Switching circuits; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1991. ESSCIRC '91. Proceedings - Seventeenth European
Conference_Location
Milan, Italy
Type
conf
Filename
5468699
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