Title :
A 4 Gs/s and 10 mV Latched Comparator in 0.5 μm GaAs HEMT Technology
Author :
Feng, Shen ; Oehler, Frank ; Sauerer, Josef ; Hagelauer, Richard ; Seitzer, Dieter
Author_Institution :
Fraunhofer-Institute for Integrated Circuits, Wetterkreuz 13, W-8520 Erlangen, Germany
Abstract :
A high performance latched comparator is implemented in a 0.5 μm GaAs HEMT technology. Measurement results verify the comparator is able to operate up to 4 Gs/s and has a 10 mV sensitivity.
Keywords :
Capacitors; Chirp modulation; Delay effects; Frequency modulation; Gallium arsenide; HEMTs; Linearity; Switching circuits; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 1991. ESSCIRC '91. Proceedings - Seventeenth European
Conference_Location :
Milan, Italy
