Title :
Design Constraints for NMOS VLSIs Due to Substrate Current
Author :
Guggenmos, X. ; Horninger, K.
Author_Institution :
Techn. Univ. Munchen, Munich, Germany
Abstract :
Channel carriers in MOMOSFETSFETs accelerated by high drain fields can generate electron hole pairs which are detected by measuring the substrate current. In switching operation the maximum substrate current only flows during a short time. Results of static and dynamic measurements and a model for circuit simulators (e.g. SPICE) are presented.
Keywords :
MOSFET; VLSI; semiconductor device measurement; MOSFET; NMOS VLSI; circuit simulators; design constraints; dynamic measurements; electron hole pairs; high drain fields; maximum substrate current; static measurement; substrate current; Circuit simulation; Current measurement; Frequency; Impact ionization; Inverters; MOS devices; MOSFETs; SPICE; Very large scale integration; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1982. ESSCIRC '82. Eighth European
Conference_Location :
Brussels
