DocumentCode
516865
Title
A 10-ns Low-Power 4K Static RAM with Cross-Coupled Thyristor Cells, Made in a Standard Oxide-Isolated Bipolar Process
Author
Grenier, D. ; Lohstroh, J. ; Dumont, D. ; Linssen, A. ; Crommenacker, J. v d ; Welten, F. ; Slob, A.
Author_Institution
RTC, Caen, France
fYear
1982
fDate
22-24 Sept. 1982
Firstpage
188
Lastpage
191
Abstract
Using a standard oxide-isolated bipolar process with 3 μm minimum design rules a very fast 4096×1 bit static RAM has been realized. This RAM is both ECL-10k and ECL-100k compatible. The power dissipation is low due to the use of low-stand-by-power-consuming cross-coupled thyristor cells and due to high performance circuitry including bit line switching.
Keywords
bipolar integrated circuits; random-access storage; thyristors; 10-NS low-power 4K static RAM; high performance circuitry; line switching; low-stand-by-power-consuming cross-coupled thyristor cells; power dissipation; size 3 mum; standard oxide-isolated bipolar process; Driver circuits; Laboratories; Power dissipation; Rails; Read-write memory; Resistors; Schottky diodes; Silicon; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1982. ESSCIRC '82. Eighth European
Conference_Location
Brussels
Type
conf
Filename
5468868
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