Title :
Subnanosecond 8 Bit Normally-Off GaAs SRAM
Author :
Frey, Pierrette ; Gabillard, Bertrand ; Rocchi, Marc
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliqu?e, 3, avenue Descartes, 94450 Limeil-Br?vannes, France
Abstract :
This paper presents the design and fabrication of the first subnanosecond 8 bit - Normally-off GaAs SRAM ever reported. The fabrication process based on 0.9 ¿m long recessed gate MESFET´s utilises only one active layer. Its simplicity makes it easily adaptable to much higher density circuits. The 8 bit - SRAM has yielded an access time of 0.9 ns for a corresponding power consumption (output buffer excluded) of 6.5 mW.
Keywords :
Circuits; Decoding; Energy consumption; Fabrication; Gallium arsenide; Implants; MESFETs; Metallization; Random access memory; Read-write memory;
Conference_Titel :
Solid-State Circuits Conference, 1983. ESSCIRC '83. Ninth European
Conference_Location :
Lausanne, Switzerland
Print_ISBN :
2-88074-021-5
