DocumentCode
516923
Title
One-Device Cells for Dynamic Random-Access Memories
Author
Rideout, V. Leo
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
fYear
1979
fDate
18-21 Sept. 1979
Firstpage
99
Lastpage
101
Keywords
Capacitance; Capacitors; DRAM chips; Dielectrics and electrical insulation; FET integrated circuits; Image storage; Integrated circuit layout; MOSFET circuits; Random access memory; Read-write memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location
Southampton, UK
Print_ISBN
0-85296-208-8
Type
conf
Filename
5468937
Link To Document