DocumentCode
516928
Title
First-Order Modeling and Temperature Behaviour of Standard ISL-Gates
Author
Lohstroh, J. ; van den Crommenacker, J.D.P.
Author_Institution
Philips Research Laboratories, Eindhoven, The Netherlands
fYear
1979
fDate
18-21 Sept. 1979
Firstpage
91
Lastpage
93
Abstract
A simple first-order model for standard ISL-gates is introduced. It shows the behaviour of the gates reasonably, also at higher temperatures. The simulation results correspond very well with the measured results.
Keywords
Capacitance; Computational modeling; Curve fitting; Delay effects; Electronics packaging; Inverse problems; Laboratories; Logic; Schottky diodes; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location
Southampton, UK
Print_ISBN
0-85296-208-8
Type
conf
Filename
5468942
Link To Document