Title :
Static Bipolar RAM Cell with Exponential Load Characteristic
Author :
Rydval, P. ; Kranzer, D.
Author_Institution :
Siemens AG, Munich
Keywords :
Capacitance; Current measurement; Current-voltage characteristics; Equations; Page description languages; Random access memory; Resistors; Roentgenium; Schottky diodes; Voltage;
Conference_Titel :
Solid State Circuits Conference - ESSCIRC 79, Fifth European
Conference_Location :
Southampton, UK
Print_ISBN :
0-85296-208-8