Title :
A Low-Voltage CMOS Bandgap Reference
Author :
Vittoz, E. ; Neyroud, O.
Author_Institution :
Centre Electron. Horloger, Neuchatel, Switzerland
Abstract :
The well-controlled exponential ID(VS) characteristics of MOS transistors operating in weak inversion allows the realization of a very good bandgap reference compatible with CMOS technologies and operating with an input voltage as low as 1.3 V. Variations of less than 3 mV over more than 100oC have been obtained on a few samples and are certainly within reach for each circuit with an adjustment. The temperature range can be further extended by improving the design.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; CMOS technology; MOS transistor; bandgap reference; low-voltage CMOS bandgap reference; weak inversion; well-controlled exponential Id(Vs) characteristic; Bipolar transistors; CMOS technology; Circuit testing; Detectors; Low voltage; MOSFETs; Photonic band gap; Resistors; Strips; Temperature;
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
