DocumentCode :
516988
Title :
I2L, On-Chip Compatible with High Voltage Analog Functions, Obtained by Selective Epi-Doping
Author :
Halbo, Leif
Author_Institution :
Central Inst. for Ind. Res., Oslo, Norway
fYear :
1978
fDate :
18-21 Sept. 1978
Firstpage :
136
Lastpage :
138
Abstract :
We discuss different ways of obtaining a simple I2L/high voltage analog process. Results are given for a standard analog process, modified by a phosphorous implant in the I2L section to increase the epi-doping. The data are compared to model calculations.
Keywords :
analogue integrated circuits; semiconductor doping; high voltage analog functions; phosphorous implant; selective EPI-doping; simple I2L/high voltage analog process; standard analog process; Analog integrated circuits; Delay; Doping; Implants; Logic circuits; Semiconductor process modeling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
Type :
conf
Filename :
5469021
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=516988
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