Title :
Short Channel Hi-CMOS Device and Circuits
Author :
Masuhara, T. ; Minato, O. ; Sakai, Y. ; Kubo, M. ; Yasui, T.
Abstract :
Short channel NMOS devices have been accepted for logic and memory circuits. However, the power dissipation tends to limit the performance. Use of CMOS circuit reduces power significantly with sacrifice of switching speed. To eliminate these disadvantages, a new short channel high speed CMOS (Hi-CMOS) device and circuit technology has been developed. It has, so far, been applied to 43-ns, 80-mW 4K static RAM and proved successful.
Keywords :
CMOS digital integrated circuits; MOSFET; random-access storage; channel n-channel transistor; channel p-channel transistor; logic circuit; memory circuit; power 80 mW; power dissipation; short channel NMOS device; short channel high speed CMOS circuit; short channel high speed CMOS device; static RAM; time 43 ns; Bipolar transistors; CMOS logic circuits; Capacitance; Delay; Hot carrier injection; Logic circuits; Logic devices; MOS devices; Switching circuits; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
