• DocumentCode
    517000
  • Title

    A 5 V Dynamic 16 K RAM with a New Memory Cell Needs Only 8 mm2

  • Author

    Horninger, Karlheinrich ; Meusburger, Günther ; Keller, Hermann

  • Author_Institution
    Res. Labs., Siemens AG, Munich, Germany
  • fYear
    1978
  • fDate
    18-21 Sept. 1978
  • Firstpage
    99
  • Lastpage
    102
  • Abstract
    A small 16 K RAM in double silicon technology using a novel dynamic memory cell has been realized and tested, using 3.5 μm design rules the complete memory is 8 mm2 large. First samples achieved an access time of 160 ns with a power dissipation of 85 mW.
  • Keywords
    DRAM chips; elemental semiconductors; silicon; double silicon technology; dynamic RAM; memory cell; power 85 mW; size 3.5 mum; time 160 ns; voltage 5 V; Capacitance; Capacitors; Circuits; Fabrication; Power dissipation; Random access memory; Read-write memory; Signal design; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
  • Conference_Location
    Amsterdam
  • Type

    conf

  • Filename
    5469033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517000