DocumentCode :
517013
Title :
Speed Limit of Thin-Epitaxy MTL/I2L
Author :
Berger, Horst H. ; Helwig, Klaus
Author_Institution :
IBM Labs., Boblingen, Germany
fYear :
1978
fDate :
18-21 Sept. 1978
Firstpage :
55
Lastpage :
56
Abstract :
The various speed limiting influences in conventional MTL devices are investigated. Even with thin epitaxy, charge storage in the npn part remains the main speed detractor. Hence, the npn part should be improved firstly, e.g. using polysilicon techniques.
Keywords :
integrated injection logic; MTL devices; charge storage; polysilicon techniques; speed detractor; thin-epitaxy NTL/I2L speed limit; Capacitance; Computer simulation; Delay; Electronic switching systems; Epitaxial growth; Impurities; Photonic band gap; Process control; Silicon; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European
Conference_Location :
Amsterdam
Type :
conf
Filename :
5469046
Link To Document :
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