Title :
Circuit Implications of the P.S.D.-MOST Process
Author :
Spaanenburg, Ir L.
Author_Institution :
Dept. of Electr. Eng., Twente Univ. of Technol., Enschede, Netherlands
Abstract :
The P.S.D.-MOST process will be compared to the polysilicon-gate process. It is shown, that P.S.D. circuitry occupy slightly less area at a higher switching speed.
Keywords :
MOSFET; PSD circuitry; PSD-MOST process; circuit implications; polysilicon source-and-drain MOST process; polysilicon-gate process; switching speed; Capacitance; Integrated circuit interconnections; Standards development; Switching circuits; Wiring;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
