Title :
N-channel-Silicongate-Technology for LSI-Applications
Author :
Dangel, J. ; Langheinrich, W. ; Stein, E. ; Stürmer, A.
Author_Institution :
Forschungsinst., AEG-TELEFUNKEN, Ulm, Germany
Abstract :
When a new LSI-circuit is to be designed, starting from the specifications first a technoIogical process for realization has to be chosen, the parameters entering into the process must be determined and guidelines for the circuit design have to be given. Last not least the technological process must be established. The circuit under consideration is a 4 k bit RAM with a 12 V power supply voltage.
Keywords :
MOS memory circuits; integrated circuit design; large scale integration; random-access storage; LSI-circuit design; N-channel silicon gate technology; RAM; power supply voltage; technological process; voltage 12 V; Circuit synthesis; Doping; Driver circuits; Integrated circuit interconnections; Inverters; Large scale integration; Oxidation; Power supplies; Silicon; Threshold voltage;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
