• DocumentCode
    517051
  • Title

    A New Method for the Determination of Transfer Inefficiency in MOS Charge Coupled Devices

  • Author

    Meusemann, B. ; Froeschle, E.

  • Author_Institution
    Inst. fur Halbleitertech., Tech. Hochschule Aachen, Aachen, Germany
  • fYear
    1976
  • fDate
    21-24 Sept. 1976
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    In order to measure the charge transfer inefficiency of very short MOS-Charge Coupled Devices a new method has been developed which makes it possible to shift the analog signal up and down within the device. This method gives also the possibility to investigate local inhomogeneites which may appear at crystal defects or overlaps if mask-composing techniques are used.
  • Keywords
    MIS devices; charge-coupled devices; MOS charge coupled devices; analog signal; crystal defects; local inhomogeneites; mask-composing techniques; transfer inefficiency; Charge coupled devices; Charge measurement; Charge transfer; Charge-coupled image sensors; Current measurement; Dark current; Delay; Signal detection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
  • Conference_Location
    Toulouse
  • Type

    conf

  • Filename
    5469094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=517051