DocumentCode :
517058
Title :
A Defect-Tolerant Design for Full-Wafer Memory LSI
Author :
Ueoka, Yasushige ; Minagawa, Chozaburo ; Oka, Masahiko ; Ishimoto, Akiteru
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corp., Musashino, Tokyo 180, Japan
fYear :
1983
fDate :
21-23 Sept. 1983
Firstpage :
7
Lastpage :
10
Abstract :
A defect-tolerant design method realizing full-wafer integration was experimentally verified. The method features automatic inspection, detection and shift or selection. A 1.5 Mbit frame-memory on a 4 inch silicon wafer (64-color 512×512-dot plane) was designed and implemented.
Keywords :
Design methodology; Hamming distance; Inspection; Integrated circuit interconnections; Laboratories; Large scale integration; Parity check codes; Silicon; Switches; Telegraphy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1983. ESSCIRC '83. Ninth European
Conference_Location :
Lausanne, Switzerland
Print_ISBN :
2-88074-021-5
Type :
conf
Filename :
5469103
Link To Document :
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