DocumentCode :
517113
Title :
A 16K MOS RAM in Double-Polysilicon Technology
Author :
Mitterer, R.W. ; Rehn, B.F.
Author_Institution :
Data Process. Div., Siemens AG, Munich, Germany
fYear :
1976
fDate :
21-24 Sept. 1976
Firstpage :
40
Lastpage :
41
Abstract :
A 16 384 bit-RAM with a chip area of 23 mm2, using double- polysilicon technology, is presented. The device with a 300 ns access time fits in a 16 pin package. Circuit principles for cell and sense amplifier and read-modify-write and page-mode operation are treated.
Keywords :
integrated circuit packaging; random-access storage; semiconductor device packaging; 16 pin package; MOS RAM; cell and sense amplifier; double polysilicon technology; page mode operation; read modify write operation; time 300 ns; Circuits; Data processing; Electric variables; Energy consumption; Leakage current; Manufacturing processes; Operational amplifiers; Packaging; Random access memory; Read-write memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
Type :
conf
Filename :
5469235
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=517113
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