Title :
Simple Al-Gate-Technology Yields High Bit-Density
Author :
Meusburger, Günther ; Keller, Hermann
Author_Institution :
SIEMENS AG, Munich, Germany
Abstract :
A single-transistor memory cell in n-channel-Al-gate technology with 2.5 μm design rules will be described. Due to a novel design feature a bit density of 5720 bit/mm has been achieved.
Keywords :
memory architecture; transistor circuits; high bit-density; n-channel-Al-gate technology; simple AL-gate-technology; single-transistor memory cell; size 2.5 mum; Capacitance; Capacitors; Circuits; Electrodes; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
