Title :
Advanced MOSFET technologies: A review
Author_Institution :
CENG/LETI/MEA
Abstract :
One of the main reasons for developing MOSFET technologies in the sixties has been the relative simplicity of the process leading to a lower cost per gate and allowing entrance to the medium scale level of integration (MSI). The first technology to enter high volume production has been the aluminium gate P channel MOSFET technology followed by the silicon gate process..
Keywords :
MOSFET; MSI; aluminium gate P channel MOSFET technology; silicon gate process; Aluminum; Costs; Integrated circuit technology; Ion implantation; Large-scale systems; MOSFET circuits; Parasitic capacitance; Production; Silicon; Very large scale integration;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
