DocumentCode :
517205
Title :
MESFET Subnanosecond Integrated Gate for LSI Circuits
Author :
Arnodo, C. ; Nuzillat, G. ; Puron, J P
fYear :
1975
fDate :
2-5 Sept. 1975
Firstpage :
110
Lastpage :
110
Keywords :
Doping profiles; Electron beams; Energy consumption; Geometry; Integrated circuit technology; Ion implantation; Large scale integration; MESFET integrated circuits; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference (ESSCIRC), 1975 First European
Conference_Location :
Canterbury, UK
Print_ISBN :
0-85296-149-9
Type :
conf
Filename :
5469340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=517205
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