Title :
A 1 GHz CMOS RF Front-End IC with Wide Dynamic Range
Author :
Rofougaran, A. ; Chang, J.Y-C. ; Rofougaran, M. ; Khorram, S. ; Abidi, A.A.
Author_Institution :
Integrated Circuits & Systems Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90095-1594
Abstract :
A 1 GHz Low Noise Amplifier and Mixer combination has been integrated in a standard 1¿m CMOS process. The circuit is matched to 50¿ at the input, and drives a 50¿ load. Overall conversion gain is 22 dB, noise figure is 3.5 dB, and the IIP3 of the combination is +12 dBm. The fully balanced circuit drains 8 mA from 3V.
Keywords :
CMOS integrated circuits; CMOS process; Dynamic range; Gain; Integrated circuit noise; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits;
Conference_Titel :
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location :
Lille, France
Print_ISBN :
2-86332-180-3
