Title :
Implementation of High Peak-Current IGBT Gate-Drive Circuits in a VLSI Compatible BiCMOS Technology
Author :
Kuratli, Christoph ; Huang, Qiuting ; Biber, Alice
Author_Institution :
Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland
Abstract :
A BiCMOS integrated gate-drive (IGD) ASIC has been implemented in a 18V, 3-¿m BiCMOS technology for IGBT based intelligent power modules (IPM). It features various monitoring and control functions such as linear dv/dt feedback and master-slave control of IGBTs, and is capable of delivering 16-18A peak current to high capacitive loads. The gate-drive ASIC has also been tested in a high voltage half-bridge module using 1.6kV IGBTs.
Keywords :
Application specific integrated circuits; BiCMOS integrated circuits; Insulated gate bipolar transistors; Integrated circuit technology; Linear feedback control systems; Master-slave; Monitoring; Multichip modules; Testing; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location :
Lille, France
Print_ISBN :
2-86332-180-3
