DocumentCode
517246
Title
Implementation of High Peak-Current IGBT Gate-Drive Circuits in a VLSI Compatible BiCMOS Technology
Author
Kuratli, Christoph ; Huang, Qiuting ; Biber, Alice
Author_Institution
Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland
fYear
1995
fDate
19-21 Sept. 1995
Firstpage
266
Lastpage
269
Abstract
A BiCMOS integrated gate-drive (IGD) ASIC has been implemented in a 18V, 3-¿m BiCMOS technology for IGBT based intelligent power modules (IPM). It features various monitoring and control functions such as linear dv/dt feedback and master-slave control of IGBTs, and is capable of delivering 16-18A peak current to high capacitive loads. The gate-drive ASIC has also been tested in a high voltage half-bridge module using 1.6kV IGBTs.
Keywords
Application specific integrated circuits; BiCMOS integrated circuits; Insulated gate bipolar transistors; Integrated circuit technology; Linear feedback control systems; Master-slave; Monitoring; Multichip modules; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. ESSCIRC '95. Twenty-first European
Conference_Location
Lille, France
Print_ISBN
2-86332-180-3
Type
conf
Filename
5469382
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