A Sub 10 nS, 20 nA Stand-by Current Full CMOS 4KÃ\x978 Dual Port Memory

A sub 10 ns, 20 nA stand-by current, full CMOS, 4k×8 DUAL PORT RAM has been developed. It was fabricated using the 0.6¿m, double metal MHS´ SCMOS technology. The use of a full bulk CMOS 8 T memory cell allows a very low stand-by current. The memory cell area is 11.8 * 10.2 ¿m² with a chip size of 3.5 * 4.85 mm². This DPRAM has been designed in order to fit high speed product market requirements. The typical performances are a chip select access time of 9.5 ns (both ports active), a stand-by current of less than 20 nA and an operating current of 250 mA for a 65 MHz cycle.